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| AT-42085 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago's AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance.TheAT-42085ishousedinalowcost.085" diameterplasticpackage.The4micronemitter-to-emitter pitchenablesthistransistortobeusedinmanydifferent functions.The20emitterfingerinterdigitatedgeometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications.Applicationsincludeuseinwirelesssystems as an LNA, gain stage, buffer, oscillator, and mixer. An optimumnoisematchnear50upto1GHz,makesthis deviceeasytouseasalownoiseamplifier. TheAT-42085bipolartransistorisfabricatedusingAvago's 10GHzfTSelf-Aligned-Transistor(SAT)process.Thedieis nitridepassivatedforsurfaceprotection.Excellentdevice uniformity,performanceandreliabilityareproducedby the use of ion-implantation, self-alignment techniques, andgoldmetalizationinthefabricationofthisdevice. Features * HighOutputPower: 20.5dBmTypicalP1dBat2.0GHz * HighGainat1dBCompression: 14.0dBTypicalG1dBat2.0GHz * LowNoiseFigure: 2.0dBTypicalNFOat2.0GHz * HighGain-BandwidthProduct:8.0GHzTypicalfT * LowCostPlasticPackage * Lead-freeOptionAvailable 85 Plastic Package AT-42085 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 0 1 80 500 150 -65 to 150 Thermal Resistance [2,4]: jc = 130C/W Notes: 1. Permanent damage may occur if any of theselimitsareexceeded. 2. Tcase=25C. 3. Derateat7.7mW/CforTc>85C. 4. See MEASUREMENTS section "Thermal Resistance"formoreinformation. Electrical Specifications, TA = 25C Symbol |S 1E| P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 35 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz f = 1.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f= 4.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f = 4.0 GHz f = .0 GHz f = 4.0 GHz Units dB dBm dB dB dB GHz -- A A pF Min. 15.5 Typ. 17.0 11.0 5.0 0.5 0.0 14.0 9.5 .0 3.5 13.5 9.5 8.0 150 Max. 30 70 0. .0 0.3 Note: 1. Forthistest,theemitterisgrounded. AT-42085 Typical Performance, TA = 25C 20 P1 dB (dBm) 1.0 GHz 24 2.0 GHz 24 P1 dB (dBm) 20 16 12 P1dB 10 V 6V 4V 16 |S21E|2 GAIN (dB) 2.0 GHz 20 P1dB 4.0 GHz 12 16 2.0 GHz 8 G1 dB (dB) 4.0 GHz 12 G1dB 4.0 GHz 16 G1 dB (dB) 14 12 10 0 G1dB 10 V 6V 4V 4 8 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 10 20 30 IC (mA) 40 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 40 35 30 GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 MAG |S21E|2 MSG 24 21 18 GAIN (dB) 15 12 9 6 3 0 0.5 1.0 2.0 NFO GA 4 3 2 1 0 3.0 4.0 5.0 NFO (dB) FREQUENCY (GHz) FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10 mA. 3 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 5C, VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 1.5 .0 .5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Mag. .7 .66 .65 .65 .65 .66 .68 .68 .69 .69 .69 .71 .75 S11 Ang. -50 -139 -168 175 163 157 149 141 133 15 114 103 91 dB 8.5 1.0 15.5 1. 9.7 8.0 6.3 5.1 3.9 3.0 . 1.4 0.6 S21 Mag. 6.5 11.3 5.96 4.06 3.06 .51 .07 1.79 1.57 1.41 1.8 1.17 1.07 Ang. 15 103 84 71 60 55 46 38 9 1 1 3 -6 dB -37.0 -9. -8.6 -7.0 -5.3 -4.0 -.8 -1.4 -19.7 -18.5 -17.1 -15.9 -15.1 S12 Mag. .014 .035 .037 .045 .054 .063 .07 .085 .104 .119 .139 .161 .177 Ang. 73 36 39 46 51 60 65 64 64 63 58 55 49 Mag. .90 .53 .45 .43 .4 .4 .41 .43 .45 .46 .47 .44 .40 S22 Ang. -16 -3 -33 -36 -41 -4 -48 -55 -61 -66 -71 -76 -85 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 5C, VCE = 8 V, IC = 35 mA Freq. GHz 0.1 0.5 1.0 1.5 .0 .5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Mag. .54 .61 .61 .6 .63 .64 .66 .67 .68 .68 .68 .71 .74 S11 Ang. -90 -163 178 167 156 15 146 139 131 13 114 103 93 dB 33.1 .6 16.8 13.4 10.9 9. 7.6 6.3 5. 4. 3.4 .5 1.7 S21 Mag. 45.38 13.45 6.90 4.67 3.5 .89 .39 .07 1.81 1.6 1.48 1.34 1.1 Ang. 137 95 79 68 59 54 45 37 8 19 10 1 -8 dB -40.1 -3.8 -9.5 -6.4 -3.9 -.5 -1. -19.8 -18.6 -17. -16.4 -15.3 -14.5 S12 Mag. .010 .03 .034 .048 .064 .075 .088 .10 .117 .138 .15 .171 .188 Ang. 66 5 61 68 66 68 69 67 65 60 56 50 46 Mag. .76 .38 .34 .3 .31 .31 .30 .31 .33 .35 .35 .34 .31 S22 Ang. -6 -30 -8 -31 -36 -40 -48 -58 -67 -73 -79 -85 -96 AmodelforthisdeviceisavailableintheDEVICEMODELSsection. AT-42085 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 .0 4.0 NFO dB 1.1 1. 1.3 .0 3.5 Mag .05 .06 .10 .4 .46 opt Ang 16 77 131 -179 -18 RN/50 0.13 0.13 0.1 0.11 0.5 4 Ordering Information Part Numbers AT-4085 AT-4085G No. of Devices 10 100 Note:Orderpartnumberwitha"G"suffixiflead-freeoption isdesired. 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 0.015 3.63 0.38 1 420 45 BASE 3 COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 EMITTER .085 2.15 2 .060 .010 1.52 .25 5 TYP. .006 .002 .15 .05 .07 0.43 .286 .030 7.36 .76 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-655EN AV0-119EN May 5, 008 |
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